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| SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SD1619 Features Very small size making it easy to provide highdensity, small-sized hybrid IC' s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 25 25 5 1 2 500 1.3 150 -55 to +150 Unit V V V A A mW W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 20 V, IE=0 VEB = 4 V, IC=0 VCE = 2 V , IC = 50 mA VCE = 10 V , IC = 50 mA VCB = 10 V , f = 1.0MHz 100 180 15 0.1 0.85 25 25 5 0.3 1.2 Min Typ Max 0.1 0.1 560 MHz pF V V V V V Unit iA iA VCE(sat) IC = 500 mA , IB = 50 mA VBE(sat) IC = 500 mA , IB = 50 mA V(BR)CBO IC = 10iA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10iA , IC = 0 hFE Classification Marking Rank hFE R 100 200 S 140 280 DB T 200 400 U 280 560 www.kexin.com.cn 1 |
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